Publication date: 30 June 2017
Source:Thin Solid Films, Volume 632
Author(s): Sehyun Oh, Seunghyo Lee, Eunseok Oh, Sangwoo Lim
The effect of SiO2 thin film passivation by sol-gel processes with various acid catalysts, ethanol (EtOH): tetraethyl orthosilicate (TEOS) volume ratios and baking temperatures on the carrier lifetime of the Si surface and Si/SiO2 interface properties was studied. SiO2 thin film passivation prepared by H2 SO4 catalyst with a EtOH:TEOS volume ratio of 10:1 at a baking temperature of 502 passivation on the Si (100) surface with resistivity higher than 10003 dangling bond at the Si/SiO2 interface. In the current study, proper sol-gel SiO2 film passivation increased the carrier lifetime on the Si surface by controlling the formation of ∙Si≡Si3 defects at the Si/SiO2 interface.
Source:Thin Solid Films, Volume 632
Author(s): Sehyun Oh, Seunghyo Lee, Eunseok Oh, Sangwoo Lim