Publication date: 31 August 2017
Source:Thin Solid Films, Volume 636
Author(s): Md. Suruz Mian, Kunio Okimura, Masao Kohzaki
DC-sputtered TiN and TiN/Ti conductive layers grown on Si substrates were investigated as bottom electrodes with the aim of realizing phase transition VO2 -based layered type devices. The VO2 films prepared at a substrate temperature of 2502 film in the case of VO2 /TiN/Si structure at 4002 film deposited on TiN/Ti/Si substrate at same temperature exhibits an abrupt out-of-plane SMT, in which oxidation of TiN layer was not observed. It was found through the X-ray photoelectron spectroscopy (XPS) depth profiles that the Ti layer played an indispensable role for avoiding oxidation of TiN, due to its high gettering effect for oxygen. Present results show advantage for introducing TiN/Ti layer as bottom electrode with high anti-oxidation ability.
Source:Thin Solid Films, Volume 636
Author(s): Md. Suruz Mian, Kunio Okimura, Masao Kohzaki