Publication date: 31 July 2017
Source:Thin Solid Films, Volume 634
Author(s): Cheol Kim, Sungdong Kim, Sarah Eunkyung Kim
SnOx thin films are potentially excellent conductive material with large hole mobility and have attracted ever-increasing attention for next generation electronic applications. In this study, SnOx thin films were deposited on a borosilicate glass substrate by radio frequency (rf) reactive sputtering using a SnO/Sn (9:1x thin film while controlling structural defects by chemical reaction between tin and oxygen. The effects of oxygen contents and annealing on various properties of SnOx thin films were studied. The structural analysis was carried out using X-ray photoelectron spectroscopy and X-ray diffraction. The electrical and optical analyses were performed by the Van der Pauw Hall effect measurement and UV/VIS spectrometer, respectively. SnOx thin films at PO2
Source:Thin Solid Films, Volume 634
Author(s): Cheol Kim, Sungdong Kim, Sarah Eunkyung Kim