Publication date: 31 August 2017
Source:Thin Solid Films, Volume 636
Author(s): Xiaolong Zhao, Yongning He, Wenbo Peng, Liang Chen
Silver oxide (Agx O) has huge potential in the catalysts and semiconductor devices applications and thus it is of great significance to characterize its semiconductor properties. Here, by using the RF reactive magnetron sputtering method under different substrate temperatures, 40, 100, and 200x O films were prepared and their semiconductor properties were carefully investigated through X-ray diffraction, Hall measurement, transmittance and photoluminescence spectrum. The main phase of the Agx O films sputtered at 40 and 1002 O. The resistivity of the Agx O films increases with the substrate temperature and the mobility of the AgO films are about 21 and 152 O and AgO films are both 3.4x O films. Moreover, the defect levels in the band gap deduced from the transmittance spectra are consistent with that from the photoluminescence spectra analysis. Besides, a metal-metal-semiconductor-metal structured X-ray detector was fabricated using the high-resistivity Ag2 O film to explore its photoconductive response to the X-ray. The signal to noise ratio is 65 and the sensitivity is 4.2
Source:Thin Solid Films, Volume 636
Author(s): Xiaolong Zhao, Yongning He, Wenbo Peng, Liang Chen