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Cu2ZnSnS4 formation by co-evaporation and subsequent annealing in S-flux using molecular beam epitaxy system

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Publication date: 30 September 2017
Source:Thin Solid Films, Volume 638
Author(s): Yosuke Shimamune, Kazuo Jimbo, Genki Nishida, Masanari Murayama, Akiko Takeuchi, Hironori Katagiri
In this study, Cu2ZnSnS4(CZTS) formation by co-evaporation and subsequent annealing in S-flux was demonstrated using molecular beam epitaxy(MBE) system and the influence of the S-flux annealing temperature on the CZTS formation was investigated. At the films formed by co-evaporation of Cu, Zn, Sn and S at 320°C and subsequent annealing in S-flux at 320–450°C, CZTS and Cu2xS phases were detected and those formations were found to have strong dependence on the S-flux annealing temperature. For annealing temperature, detected CZTS has maximum amount at the range of 380–420°C. On the other hand, detected Cu2xS is minimum amount at that temperature range. Depth profile of those films showed that significant Cu segregation occurred to the film surface above 400°C of S-flux annealing temperature. These results suggest that the CZTS phase with less secondary phase of Cu2xS, which has worse impact on the solar cell performance, is formed in the limited temperature range of 380–420°C of S-flux annealing performed after co-evaporation. 2.25% power conversion efficiency was achieved at the solar cell with CZTS formed by the co-evaporation at 320°C and subsequent S-flux annealing at 400°C.


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