Characteristics of thulium doped gallium oxide films grown by pulsed laser deposition

Publication date: 1 October 2017
Source:Thin Solid Films, Volume 639
Author(s): Qixin Guo, Kazuo Nishihagi, Zhengwei Chen, Katsuhiko Saito, Tooru Tanaka
Thulium (Tm) doped Ga2O3 films were deposited on sapphire substrates by pulsed laser deposition (PLD) with changing Tm compositions in the targets. Energy dispersive spectroscopy results reveal that films with different Tm compositions can be tailored by changing the Tm composition in the targets. X-ray diffraction and Raman spectra analysis indicate that all films have the monoclinic structure. Photoluminescence measurements demonstrate that the emission peaks at 460, 650 and 800nm are observed from the Tm³⁺ 4f intrashell transitions from ¹G4 excited states to the ³H6, ³F4, and ³H5 states, respectively. The results suggest that PLD is a promising method for obtaining high quality Tm doped Ga2O3 films, which paves the way for the fabrication of optoelectronic devices based on Ga2O3 films.