Publication date: 30 November 2017
Source:Thin Solid Films, Volume 642
Author(s): H. Coelho-Júnior, J.H.R. dos Santos, R.L. Maltez
N+ ions at 503 N4 layer obtained by sputtering deposition. The Si3 N4 /GaAs system was kept at 4503 N4 /GaAs interface of the as-implanted sample, which showed a layered structure. In addition, the N-implanted region on the GaAs side was almost amorphous. By subsequent thermal annealing at 8502 flow, we were able to synthesize a GaN nanolayer with the wurtzite structure. We also identified cubic-structured GaN with a lattice parameter of (0.42
Source:Thin Solid Films, Volume 642
Author(s): H. Coelho-Júnior, J.H.R. dos Santos, R.L. Maltez