Publication date: 30 November 2017
Source:Thin Solid Films, Volume 642
Author(s): Jongsik Kim, Dae Chul Kim, Young-Woo Kim
The characteristics of silicon oxynitride (SiON) films grown using neutral-beam and typical plasma-enhanced chemical vapor deposition methods are compared. Neutral-beam and plasma oxynitridation processes were performed using a nitrogen neutral beam at room temperature and a nitrogen plasma at 400
Source:Thin Solid Films, Volume 642
Author(s): Jongsik Kim, Dae Chul Kim, Young-Woo Kim