Publication date: Available online 10 October 2017
Source:Thin Solid Films
Author(s): Shinichi Ike, Wakana Takeuchi, Osamu Nakatsuka, Shigeaki Zaima
We report the epitaxy of n -Ge layer with in situ phosphorus (P)-doping using metal-organic chemical vapor deposition (MOCVD) method with tertiary-butyl-germane and tri-ethyl-phosphine precursors. The crystalline and electrical properties of n -Ge epitaxial layers have been investigated using X-ray diffraction, atomic force microscopy, and Hall effect measurements in detail. In situ P-doping with MOCVD demonstrates the incorporation of P in Ge as high as 1
Source:Thin Solid Films
Author(s): Shinichi Ike, Wakana Takeuchi, Osamu Nakatsuka, Shigeaki Zaima