X-ray diffraction and X-ray photoelectron spectroscopy characterization of sulfurized tin thin films deposited by thermal evaporation

Publication date: 1 January 2018
Source:Thin Solid Films, Volume 645
Author(s): Hiroto Oomae, Takahito Eguchi, Kunihiko Tanaka, Misao Yamane, Naofumi Ohtsu
In this paper, we report the structural properties of tin sulfide (SnS) thin films deposited by a technique involving thermal evaporation and sulfurization. X-ray diffraction (XRD) and X-ray photoelectron spectroscopy (XPS) were used to determine the crystallinity and elemental composition of the sulfurized tin thin films. With increasing sulfurization temperature, Sn and its native oxide reacted with S, yielding SnS. XRD showed evidence of crystal growth along the SnS [040] direction in films sulfurized at 260 and 300°C. The growth of SnS crystals was completed at 300°C, and stoichiometry was the highest. Depth profiles of the composition measured by XPS showed a flat sulfur concentration towards the interior of the film sulfurized at 300°C. The hole concentration was 1.6×10¹⁵ cm⁻³. The films showed a band gap of 1.2eV and an absorption coefficient of >10⁴ cm⁻¹.