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Low-temperature ultrasonic spray deposited aluminum doped zinc oxide film and its application in flexible Metal-Insulator-Semiconductor diodes

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Publication date: 1 January 2018
Source:Thin Solid Films, Volume 645
Author(s): Miguel A. Dominguez, Jose A. Luna-Lopez, Sonia Ceron
In this work, the fabrication and characterization of fully solution-processed flexible Metal-Insulator-Semiconductor (MIS) diodes are presented. The MIS structure was fabricated using aluminum doped zinc oxide and spin-on glass as semiconductor and insulator, respectively. The maximum temperature used was 200°C. The electrical characteristics of the flexible devices show a good agreement with the typical characteristics of a semiconductor diode even while bent to 5mm tensile radius.


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