Anti phase boundary free GaSb layer grown on 300mm (001)-Si substrate by metal organic chemical vapor deposition

Publication date: 1 January 2018
Source:Thin Solid Films, Volume 645
Author(s): T. Cerba, M. Martin, J. Moeyaert, S. David, J.L. Rouviere, L. Cerutti, R. Alcotte, J.B. Rodriguez, M. Bawedin, H. Boutry, F. Bassani, Y. Bogumilowicz, P. Gergaud, E. Tournié, T. Baron
Antiphase boundaries free GaSb epitaxial layers with low surface roughness (<0.5nm) have been synthesized on standard microelectronic 300mm nominal (001)-Si substrates by metal organic chemical vapor deposition using a two-step growth process. By adjusting the growth temperature and the thickness of the nucleation layer, antiphase boundary free GaSb layers as thin as 250nm are obtained. The 12% lattice mismatch between GaSb and Si is accommodated by both the formation of threading dislocations and a periodic array of 90° misfit dislocations at the interface. A GaSb layer inserted between AlSb barriers has been grown on an optimized GaSb/(001)-Si buffer layer and exhibits room temperature photoluminescence.