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High pressure Raman scattering of a co-evaporated Cu2SnSe3 thin film

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Publication date: 1 February 2018
Source:Thin Solid Films, Volume 647
Author(s): Yongshin Kim, In-Hwan Choi
We fabricated Cu2SnSe3 thin film on a Mo-coated soda-lime glass substrate by a co-evaporation method. The X-ray diffraction pattern revealed the formation of polycrystalline Cu2SnSe3 with a monoclinic structure (space group Cc). Raman scattering measurements were also performed on the thin film at a pressure ranging from 1atm to 7.01GPa. The Raman spectrum was resolved into 4 Lorentzian peaks observed at 184cm1, 206cm1, 236cm1, and 252cm1 at 1atm, which correspond to A′, A″, A″, and A′ symmetry, respectively. The effects of pressure on these Raman-active phonon modes were discussed. The measured elastic properties of Cu2SnSe3 under high pressure were also compared with those of Cu2ZnSnSe4.


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