Investigation of boron incorporation in delta doped diamond layers by secondary ion mass spectrometry

Publication date: 1 May 2018
Source:Thin Solid Films, Volume 653
Author(s): M.A. Lobaev, A.M. Gorbachev, A.L. Vikharev, V.A. Isaev, D.B. Radishev, S.A. Bogdanov, M.N. Drozdov, P.A. Yunin, J.E. Butler
Boron incorporation into ultra-thin boron doped epitaxial grown diamond layers of thickness of 1 to 2nm was investigated. Time of flight secondary ion mass spectroscopy was used to examine the boron concentration as a function of depth of the samples. The boron depth profiles were deconvoluted by modeling and measuring the depth resolution function with specially grown multiple delta doped layers on the same substrate. Boron incorporation in the delta layers as a function of substrate temperature and B/C ratio in the reactant gas was determined. A diamond deposition regime in which the doped delta layers with thickness of 1–2nm and with boron concentrations of about 4–5·10²⁰ cm⁻³ was obtained. Such layers are suitable for implementation of two-dimensional hole “gas” in diamond with high mobility and high carrier concentrations.