Publication date: Available online 5 January 2016
Source:Thin Solid Films
Author(s): Shiwang Long, Yongfeng Li, Bin Yao, Zhanhui Ding, Ying Xu, Gang Yang, Rui Deng, Zhenyu Xiao, Dongxu Zhao, Zhenzhong Zhang, Ligong Zhang, Haifeng Zhao
Reproducible p-type Ag-S co-doped ZnO (ASZO) films were grown on glass substrate by a modified hydrothermal method, where reaction solution is separated from alkali solution and O2 is removed from autoclave to avoid deoxidation of Ag+ and oxidation of S2 − in the solution. It is found that the Ag substitutes for the Zn in monovalent state (AgZn +) and the S for the O in bivalent state (SO 2 −) in the ASZO. Both AgZn + and SO 2 − have two doping states, one is each AgZn + is surrounded by 4O2 − to form AgZn + acceptor and eachSO 2 − is surrounded by 4Zn2 +, while the other is one AgZn + bounds with nSO 2 − to form AgZn +-nSO 2 −(n4) complex acceptor. It is demonstrated that Ag doping can suppress formation of interstitial Zn and O vacancy in the ASZO and S doping can enhance solubility of Ag in the ASZO. Hall measurement indicates that the p-type ASZO film has hole density as high as 1018 cm− 3, which is much higher than that of ASZO prepared by magnetron sputtering. The mechanism of formation of the p-type ASZO with high hole density is suggested in the present paper.
Source:Thin Solid Films
Author(s): Shiwang Long, Yongfeng Li, Bin Yao, Zhanhui Ding, Ying Xu, Gang Yang, Rui Deng, Zhenyu Xiao, Dongxu Zhao, Zhenzhong Zhang, Ligong Zhang, Haifeng Zhao