Growth of {110}-one-axis-oriented perovskite-type oxide films using self-aligned epitaxial (101)PdO//(111) Pd double layers

Publication date: 29 January 2016
Source:Thin Solid Films, Volume 599
Author(s): Hiroki Tanaka, Tetsuro Kariya, Takao Shimizu, Kiyoshi Uchiyama, Hiroshi Funakubo
Self-aligned (101)-one-axis-oriented PdO layer was obtained on (111) Pd films prepared on (111)Pt/TiOx/SiO2/Si [abbreviated as (111)Pt/Si] substrates by the heat treatment at 750°C under atmospheric oxygen flow. Films with (110) c -oriented SrRuO3 with perovskite structure were successfully deposited at 500°C on a (101)-oriented PdO layer by an RF magnetron sputtering method due to their relatively small lattice mismatch. A (101)-oriented Sr(Zr0.8Y0.2)O3-δ (SZYO) film can be successfully prepared on (110) c -oriented SrRuO3 and its proton conductivity is almost the same as that of (111) c -oriented SZYO but slightly smaller than that of (111) c -oriented one. As the conductivity is strongly affected by the film crystallinity, we can conclude that the newly fabricated (110) c -oriented SZYO has almost the same crystallinity comparing to the films with other orientation. We have successfully demonstrated that the use of (101)PdO//(111)Pd double layer is a good candidate to grow {110}-one-axis-oriented perovskite thin films on Si substrates.