Publication date: Available online 27 January 2016
Source:Thin Solid Films
Author(s): J. Yun, J. Huang, A. Teal, K. Kim, S. Varlamov, M.A. Green
In this work, crystallographic orientation of polycrystalline silicon films on glass formed by continuous wave diode laser crystallization were studied. Most of the grain boundaries were coincidence lattice Σ3 twin boundaries and other types of boundaries such as, Σ6, Σ9, and Σ21 were also frequently observed. The highest photoluminescence signal and mobility were observed for a grain with (100) orientation in the normal direction. X-ray diffraction results showed the highest occupancies between 41 and 70% along the (110) orientation. However, the highest occupancies changed to (100) orientation when a 100x capping layer was applied. Suns-Voc measurement and photoluminescence showed that higher solar cell performance is obtained from the cell crystallized with the capping layer, which is suspected from increased occupancies of (100) orientation.
Source:Thin Solid Films
Author(s): J. Yun, J. Huang, A. Teal, K. Kim, S. Varlamov, M.A. Green