Publication date: 1 February 2016
Source:Thin Solid Films, Volume 600
Author(s): K. Ichikawa, H. Kodama, K. Suzuki, A. Sawabe
The classification of etch pits formed by hydrogen plasma etching on heteroepitaxial diamond has been done by cross-sectional transmission electron microscope (TEM). We demonstrated that the origin of etch pit was mainly [001] threading dislocation. From invisibility criterion of dislocation contrast in TEM observation, this dislocation was identified as edge and 45° mixed dislocation. The correlation between dislocation types and etch pit shape was discussed.
Source:Thin Solid Films, Volume 600
Author(s): K. Ichikawa, H. Kodama, K. Suzuki, A. Sawabe