Black-silicon production process by CF4/H2 plasma

Publication date: Available online 7 February 2016
Source:Thin Solid Films
Author(s): E. Vassallo, M. Pedroni, S.M. Pietralunga, R. Caniello, A. Cremona, F. Di Fonzo, F. Ghezzi, F. Inzoli, G. Monteleone, G. Nava, V. Spampinato, A. Tagliaferri, M. Zani
Nanoscale structures in silicon have been produced by means of a maskless plasma process that employs tetrafluoromethane and hydrogen. The influence of the radio-frequency power and process time on the surface texturing was studied. Desirable texturing effect has been achieved by applying an RF power in the range of 200–280W and process time in the range of 20–30min. The textured surface is characterized by nanopillars with lateral dimensions ranging from 50 to 300nm and with a depth in the 100–300nm range. Depending on process parameters in the plasma etching recipe, the optical reflectance of the silicon surface is lowered and R<5% is reached in the range going from the visible to the near-IR region.