Effect of InxGa1−xAs interlayer on the properties of In0.3Ga0.7As epitaxial films grown on Si (111) substrates by molecular beam epitaxy

Publication date: 31 December 2015
Source:Thin Solid Films, Volume 597
Author(s): Fangliang Gao, Lei Wen, Shuguang Zhang, Jingling Li, Xiaona Zhang, Guoqiang Li, Ying Liu
High-quality In0.3Ga0.7As films have been epitaxially grown on Si (111) substrate by inserting an In x Ga1− x As interlayer with various In compositions by molecular beam epitaxy. The effect of In x Ga1− x As interlayer on the surface morphology and structural properties of In0.3Ga0.7As films is studied in detail. It reveals that In0.3Ga0.7As films grown at appropriate In composition in In x Ga1− x As interlayer exhibit smooth surface with a surface root-mean-square roughness of 1.7nm; while In0.3Ga0.7As films grown at different In composition of In x Ga1− x As interlayer show poorer properties. This work demonstrates a simple but effective method to grow high-quality In0.3Ga0.7As epilayers on Si substrates, and brings up a broad prospect for the application of InGaAs-based optoelectronic devices on Si substrates.