Publication date: 31 December 2015
Source:Thin Solid Films, Volume 597
Author(s): J.J.M. Vequizo, C. Zhang, M. Ichimura
Cu2 O/Fe–O heterojunction solar cells were successfully fabricated by electrodeposition method. The as-deposited thin film exhibited signature Raman peaks associated to γ-FeOOH. By thermal annealing in air at 100–4002 O3 polymorphs were produced. Both as-deposited and annealed Fe–O films showed n -type conductivity with approximated band gap of 2.1–2.32 O3 films. Cu2 O as the p -type layer was partnered with as-deposited and annealed Fe–O thin films to fabricate different heterojunctions based on Fe oxides compounds. Remarkably, all the fabricated Cu2 O/Fe–O heterostructures exhibited photovoltaic characteristics (open circuit voltage, VOC SC
Source:Thin Solid Films, Volume 597
Author(s): J.J.M. Vequizo, C. Zhang, M. Ichimura