Resistivity of atomic layer deposition grown ZnO: The influence of deposition temperature and post-annealing

Publication date: Available online 3 March 2016
Source:Thin Solid Films
Author(s): J. Laube, D. Nübling, H. Beh, S. Gutsch, D. Hiller, M. Zacharias
Conductive zinc oxide (ZnO) films deposited by atomic layer deposition were studied as function of post-annealing treatments. Effusion experiments were conducted on ZnO films deposited at different temperatures. The influence of different annealing atmospheres on the resistivity of the films was investigated and compared to reference samples. It was found that the influence of the deposition temperature on the resistivity is much higher than that of subsequent annealings. This leads to the conclusion that reduction of the resistivity by diffusion of different gases, such as oxygen and hydrogen, into annealed ZnO films is unlikely.