Electrical and photoelectrical properties of Ag/n-type Si metal/semiconductor contact with organic interlayer

Publication date: 31 December 2015
Source:Thin Solid Films, Volume 597
Author(s): Enise Ozerden, Yusuf Selim Ocak, Ahmet Tombak, Tahsin Kilicoglu, Abdulmecit Turut
Electrical and photoelectrical features of Metal/Organic Interlayer/Inorganic Semiconductor (MIS) Schottky device were investigated by using current–voltage (I–V) and capacitance–voltage (C–V) measurements at room temperature. For this purpose, 9,10-dihydrobenzo[a]pyrene-7(8H)-one (9,10-H2BaP) thin film was used as organic interlayer between Ag metal and n-Si semiconductor. Firstly, optical properties of the organic thin film were determined from optical absorption spectrum, and its optical band gap was found to be 3.73eV. Then, the electrical parameters of the Ag/9,10-H2BaP/n-Si diode such as ideality factor (n), barrier height (Φ b(I–V)), diffusion potential (V d ), barrier height (Φ b(C–V)) and carrier concentration (N d ) were calculated from I–V and C–V characteristics at room temperature. The Φ b values obtained from both measurements were compared with each other. Besides, the effect of light on I–V measurements of the structure was examined at illumination intensities ranging from 40 to 100mW/cm² with 20mW/cm² intervals using a solar simulator with AM1.5 filter. Light sensitivity, open circuit voltage (V OC ) and short circuit current (I SC ) parameters of Ag/9,10-H2BaP/n-Si structure were calculated from under light measurements.