Publication date: 31 December 2015
Source:Thin Solid Films, Volume 597
Author(s): A.P. McCoy, J. Bogan, A. Brady, G. Hughes
In this study, the use of atomic oxygen to oxidise ruthenium thin films is assessed. Atomic layer deposited (ALD) ruthenium thin films (~2 at exposures as low as ~2 . Additionally, the partial oxidation of these ruthenium films occurred at temperatures as low as 293
Source:Thin Solid Films, Volume 597
Author(s): A.P. McCoy, J. Bogan, A. Brady, G. Hughes