Publication date: 1 April 2016
Source:Thin Solid Films, Volume 604
Author(s): Ho Sung Kim, Min Su Park, Sang Hyeon Kim, Suk In Park, Jin Dong Song, Sang Hyuck Kim, Won Jun Choi, Jung Ho Park
We report the electrical and optical characteristics of indium-tin-oxide (ITO)/GaAs Schottky barrier solar cells (SBSCs) with embedded InAs quantum dots (QDs). Twenty layers of self-assembled InAs QDs are inserted into the SBSCs so as to increase the potential barrier height at the ITO/GaAs junctions and to create additional photo-generated electrons in the quantum confined states of the QDs. After analyzing the current density–voltage characteristics, the photoluminescence, and the external quantum efficiency of the fabricated SBSCs, it was found that the incorporation of InAs QDs into the ITO/GaAs SBSCs results in an increase of both of the open-circuit voltage and the short-circuit current density compared to SBSCs without InAs QDs.
Source:Thin Solid Films, Volume 604
Author(s): Ho Sung Kim, Min Su Park, Sang Hyeon Kim, Suk In Park, Jin Dong Song, Sang Hyuck Kim, Won Jun Choi, Jung Ho Park
