Thermal characterization of epitaxial grown polycrystalline silicon

Publication date: 1 May 2016
Source:Thin Solid Films, Volume 606
Author(s): Robert Liebchen, Oliver Breitschädel, Ali Riza Durmaz, Andreas Griesinger
The thermal conductivity of various epitaxial grown polycrystalline silicon layers was measured by using the 3-ω-method. Heater widths of 20μm, 55μm and 80μm were structured applying standard photolithography. Experimental values are given, depending on layer thickness, ranging from 5μm to 50μm, the impurity concentration, the deposition temperature and recrystallization time. The measured values were used to discuss the cross-plane and in-plane thermal conductivity.