Publication date: 1 May 2016
Source:Thin Solid Films, Volume 606
Author(s): Kian Heng Goh, A.S.M.A. Haseeb, Yew Hoong Wong
Growth of 1502 O3 films by sputtered pure samarium metal film on silicon substrates and followed by thermal oxidation process in oxygen ambient at 7002 O3 film and existence of interfacial layer have been evaluated by X-ray diffraction, Fourier transform infrared and Raman analysis. Crystallite size and microstrain of Sm2 O3 were estimated by Williamson–Hall plot analysis. Calculated crystallite size of Sm2 O3 from Scherrer equation has similar trend with the value from Williamson–Hall plot. The presence of interfacial layer is supported by composition line scan by energy dispersive X-ray spectroscopy analysis. The surface roughness and surface topography of Sm2 O3 film were examined by atomic force microscopy analysis. The electrical characterization revealed that 15
Source:Thin Solid Films, Volume 606
Author(s): Kian Heng Goh, A.S.M.A. Haseeb, Yew Hoong Wong