Publication date: Available online 9 April 2016
Source:Thin Solid Films
Author(s): Che-Chun Lin, Jung-Jie Huang, Dong-Sing Wuu, Chao-Nan Chen
The passivation layer of Al2 O3 thin films prepared by liquid phase deposition on p-type (100) silicon substrate are investigated. The deposition solution of aluminum sulfate and sodium bicarbonate are used for Al2 O3 thin films deposition. The concentration of the sodium bicarbonate in the deposition solution controls the deposition rate of Al2 O3 thin films. The optimum condition is a pH value of deposition solution of 3.3 and annealing at 500°C in N2 atmosphere for 30 min. The effective minority carrier lifetime and fixed oxide charge density are 124.51 μs and -2.152 O3 passivation layer deposition.
Source:Thin Solid Films
Author(s): Che-Chun Lin, Jung-Jie Huang, Dong-Sing Wuu, Chao-Nan Chen