Publication date: 30 September 2016
Source:Thin Solid Films, Volume 615
Author(s): Ashwini B. Rohom, Priyanka U. Londhe, Nandu B. Chaure
CuInSe2 (CIS) thin films have been prepared by potentiostatic electrochemical synthesis route in an aqueous medium. A conventional three-electrode electrochemical geometry was used to study the influence of agitation on electrodeposition of CIS. The co-deposition potentials for Cu-In-Se, − 0.4 V and − 0.6 V were optimized by using cyclic voltammetry measurements. The diffusive controlled growth with instantaneous nucleation is observed by Chronoamperometric measurements. X-ray diffraction (XRD) and Raman spectroscopy, UV–Vis spectroscopy, energy dispersive X-ray analysis (EDAX) and scanning electron microscopy (SEM) were employed to study the structural, optical, compositional and morphological properties, respectively. Polycrystalline CIS thin films with tetragonal structure were obtained without agitation, however the secondary phases of Cux Sey were attributed with agitation. The Raman results are found to be in good agreement with XRD and EDAX analyses. Without agitation the energy band gap (Eg) was estimated ~ 1.1 eV. The higher values of Eg ~ 1.5 to 1.8 eV measured for the samples grown with agitation are proposed due to the inhomogeneous growth of precursors and the change in surface morphology. Uniform, compact and well adherent CIS layers were deposited with and without agitation. The deposition potentials and agitation conditions were found to be greatly affected on the surface morphology. The stoichiometric CIS layer was deposited at − 0.6 V without agitation.
Source:Thin Solid Films, Volume 615
Author(s): Ashwini B. Rohom, Priyanka U. Londhe, Nandu B. Chaure