Publication date: 1 October 2016
Source:Thin Solid Films, Volume 616
Author(s): Jun Chen, Jiabing Lv, Qingsong Wang
The Al/MoO3 /p -InP metal/insulator/semiconductor (MIS) and Al/p -InP metal/semiconductor (MS) Schottky Barrier Diodes (SBDs) have been fabricated to confirm Schottky barrier heights (SBHs) enhancement by inserting an ultrathin insulator layer between the MS contact. The current-voltage (I -V ) and capacitance-voltage (C -V ) measurements have been performed in the temperature range of 310–4003 /p -InP MIS SBDs and Al/p -InP MS SBDs, respectively, which are both close to the theoretical value known for p -InP (603 is a good candidate for the interfacial insulator layer.
Source:Thin Solid Films, Volume 616
Author(s): Jun Chen, Jiabing Lv, Qingsong Wang