Publication date: 1 October 2016
Source:Thin Solid Films, Volume 616
Author(s): Sergii Tutashkonko, Noritaka Usami
The joint impact of the Si/Al layer thickness on the growth kinetics, the crystalline orientation and the size of the poly-Si grains resulting from aluminum-induced crystallization process is analyzed. It is shown that the surface coverage of resulting poly-Si layers rapidly decreases together with annealing temperature and the Si/Al ratio. The surplus of a-Si over the Al needed to ensure continuity of the poly-Si thin film is in the range of 35%–50% for Al layers thicker than 225
Source:Thin Solid Films, Volume 616
Author(s): Sergii Tutashkonko, Noritaka Usami