Influence of reacting gas content on structural and electro-physical properties of nanostructured diamond films grown by chemical vapor deposition with crossed E/H field glow discharge stabilization

Publication date: 1 October 2016
Source:Thin Solid Films, Volume 616
Author(s): Iurii Nasieka, Victor Strelchuk, Yuriy Stubrov, Stanislav Dudnik, Konstantin Koshevoy, Vladimir Strel'nitskij
The method and setup for polycrystalline diamond films deposition from the gas-phase using the direct current (DC) glow discharge stabilized by crossed E/H field are presented. The mentioned method was used for the preparation of nanostructured diamond films. The nanostructure formation was realized by N2 addition to Ar/CH4/H2 plasma. The detailed study of electro-physical, morphological and structural properties was done using simple two-electrodes scheme of resistivity measurements, atomic force and scanning electron microscopies as well as Raman spectroscopy. The data of electro-physical measurements is in good correlation with the data of optical measurements and complement each other showing the complete picture of the processes of modification of the diamond films structure induced by nitrogen atoms incorporation.