Publication date: Available online 11 October 2016
Source:Thin Solid Films
Author(s): O. Portillo Moreno, R. Gutiérrez Pérez, R. Palomino Merino, M. Chávez Portillo, G. Hernández Téllez, E. Rubio Rosas
Herein, the growth of PbS doped systematically with solutions containing In3 + ions by using chemical bath as a green approach is reported, with the aim of studying the effects of such In3 +-doping on the morphological, structural and some optical properties of the PbS thin films obtained. The morphological changes of the films were followed by Atomic Force Microscopy and Scanning Electron Microscopy. X-ray diffraction studies showed growth in all films of the zinc blende phase. The grain size was found to be ~ 32 nm and ~ 24–14 nm for the undoped and doped samples, respectively. The absorbance results in doped films showed excitonic peaks at ~ 1.6 eV, ~ 1.8 eV, ~ 2.2 eV, owing to higher energy transitions from 1Dh → 1De, 2Sh → 2Sh and 2Ph → 2Pe , states, respectively. By optical absorption, a shift for the band gap energy was observed from ~ 1.45 eV to ~ 2.18–2.3 eV range for the undoped and doped films, respectively. Gibbs energy calculation for the In3 + doping PbS process was also examined.
Source:Thin Solid Films
Author(s): O. Portillo Moreno, R. Gutiérrez Pérez, R. Palomino Merino, M. Chávez Portillo, G. Hernández Téllez, E. Rubio Rosas