A better understanding of Cbd-Zn(S,O) using hydrogen peroxide as an additive

Publication date: Available online 19 October 2016
Source:Thin Solid Films
Author(s): Thibaud Hildebrandt, Nicolas Loones, Nathanaelle Schneider, Jackie Vigneron, Muriel Bouttemy, Arnaud Etcheberry, Daniel Lincot, Negar Naghavi
This paper explores the influence of hydrogen peroxide H2O2 on the chemical bath deposition of zinc oxisulfide Zn(S,O) and the final photovoltaic performances of the Cu(In,Ga)Se2-based (CIGSe) associated device. First, the influence of H2O2 on Zn(S,O) deposition rate and growth mechanism is studied with theoretical considerations and in situ quartz crystal microgravimetry measurements. It shows that hydrogen peroxide concentration masters the deposition rate and induces a “cluster-by-cluster” mechanism. Morphology and composition of Zn(S,O) films have been investigated by scanning electron microscopy and X-Ray photoelectron spectroscopy techniques. In a second part the optimized process is then on co-evaporated Cu(In,Ga)Se2 substrates and solar cells are completed with a (Zn,Mg)O/ZnO:Al window layers. The use of H2O2 leads to lower efficiency than CdS-based reference, which can be explained by an oxidation of the CIGSe surface.