Publication date: Available online 22 October 2016
Source:Thin Solid Films
Author(s): Akimori Tabata
We investigated the temperature dependences of the current density–voltage (J V ) and capacitance–frequency (C f ) characteristics of hydrogenated nanocrystalline cubic SiC/crystalline Si heterojunction diodes. The J V characteristics showed that over the measured temperature range (100–400C f characteristics showed two relaxation processes dominant at low and high temperatures. The relaxation process dominant at low temperatures had different relaxation times depending on the heterojunction diode, which was caused by shallow states with different densities. The relaxation process dominant at high temperatures had almost the same relaxation times among diodes, which was caused by deep states (0.25–0.27
Source:Thin Solid Films
Author(s): Akimori Tabata