High mobility thin film transistors based on zinc nitride deposited at room temperature

Publication date: Available online 26 October 2016
Source:Thin Solid Films
Author(s): Miguel A. Dominguez, Jose Luis Pau, Mayte Gómez-Castaño, Jose A. Luna-Lopez, Pedro Rosales
In this work, the characterization of high mobility thin-film transistors based on zinc nitride films deposited at room temperature by magnetron radio-frequency sputtering is presented. The values extracted of field-effect mobility were >2cm²/Vs for long channel devices. For short channel devices, a reduction of the mobility values is found and, as a result of the analysis of the width-normalized resistance for different channel lengths and gate voltages, the reduction is attributed to the effects of a high contact resistance. The impact of the gate dielectric thickness on electrical characteristics is also presented.