Publication date: Available online 3 November 2016
Source:Thin Solid Films
Author(s): Sanghyun Lee, Kent Price, Jaehoon Park
We have modeled the quantum efficiency of thin film solar cell devices with a case study of kesterite solar cells under a set of biased conditions with SCAPS device simulator. This study reveals that the carrier collection with deep acceptor type defect distribution above and below 0.3 eV from the midgap near the heterojunction interface is pronounced at particular wavelength regions, (500 - 550 nm) at particular biased conditions, (0.2 - 0.25 V). Specifically, these acceptor type defect states influence kesterite spectral responses of red and infrared light wavelength regions in quantum efficiency caused by affected space charge region width toward the back contact. As a result, the intensified drop of quantum efficiency occurs at ¿550 nm at forward bias (0.25 V) with a peak spectral response near 520 nm to 530 nm. This numerical model elucidates the probable loss mechanism to account for a deficit in open circuit voltage by taking into account of voltage and light bias models.
Source:Thin Solid Films
Author(s): Sanghyun Lee, Kent Price, Jaehoon Park