Reduced parasitic contact resistance and highly stable operation in a-In-Ga-Zn-O thin-film transistors with microwave treatment

Publication date: Available online 4 November 2016
Source:Thin Solid Films
Author(s): Po-Tsun Liu, Chih-Hsiang Chang, Guang-Ting Zheng, Chur-Shyang Fuh, Li-Feng Teng, Meng-Chyi Wu, Yao-Jen Lee
In this work, we studied the effects of microwave annealing process on amorphous In-Ga-Zn-O (a-IGZO) thin-film transistors (TFTs) and demonstrated a high performance and reliable device characteristics. The characteristic trapping time (τ) derived from stretched-exponential model was extracted to exhibit the quality improvement of a-IGZO thin film. The microwave annealing features a selective heating and potentially avoids the damage to materials neighboring the a-IGZO channel layer in TFT device structure during thermal processes, resulting in lower parasitic source to drain resistance.