Publication date: Available online 8 November 2016
Source:Thin Solid Films
Author(s): J.T. Yin, X.S Liu, L. Wei, Y.F. Yin, W.F. Zhang
Pr4 O7 -Pr2 CuO4-δ (PCO) thin films were grown on Pt (Pt/Ti/SiO2 /Si) substrates by pulsed laser deposition and their resistive switching behavior was investigated. The resistance ratio RH/L (Rhigh /Rlow ) could be larger than 104, which can be maintained up to 504 O7 -PCO/Pt device possesses excellent endurance and retention properties. The physical mechanism of resistive switching in Pr4 O7 -PCO film could be ascribed to the forming and rupturing of conductive filaments via migration of oxygen vacancies.
Source:Thin Solid Films
Author(s): J.T. Yin, X.S Liu, L. Wei, Y.F. Yin, W.F. Zhang