Publication date: Available online 19 November 2016
Source:Thin Solid Films
Author(s): Yuhki Satoh, Yuhki Itoh, Tomoyuki Kawashima, Katsuyoshi Washio
Effects of Ge growth rate and growth temperature were investigated on C-mediated formation of Ge quantum dots (QDs) on Si (100) substrate. The samples were prepared by a solid-source molecular beam epitaxy. Ge dots were scaled down and dot density increased with increasing Ge growth rate up to about 2
Source:Thin Solid Films
Author(s): Yuhki Satoh, Yuhki Itoh, Tomoyuki Kawashima, Katsuyoshi Washio