Publication date: Available online 3 December 2016
Source:Thin Solid Films
Author(s): Kyota Kuroiwa, Tetsuya Kaneko, Masao Isomura
We have investigated the lateral solid phase crystallization (SPC) of amorphous germanium (a-Ge) precursors on single crystalline silicon (c-Si) substrates with a silicon dioxide (SiO2 ) stripe structure. The a-Ge layers were deposited on c-Si with SiO2 stripes at 1002 layers, except near the c-Si/SiO2 boundary. As a result we have obtained lateral preferential crystalline growth of c-Ge of large grain size by SPC from a-Ge films on c-Si over SiO2 stripes, where the preferential crystalline growth distance in a-Ge on SiO2 increased from 3 to 5
Source:Thin Solid Films
Author(s): Kyota Kuroiwa, Tetsuya Kaneko, Masao Isomura