Publication date: Available online 5 December 2016
Source:Thin Solid Films
Author(s): I.R. Kaufmann, A. Pick, M.B. Pereira, H. Boudinov
Metal-Insulator-Semiconductor Schottky diodes were fabricated on SiC, as a potential use for particle detectors. Nickel was used as Schottky and back ohmic contacts. The dielectrics HfO2 and TiO2 were investigated as insulating layers and deposited by Atomic Layer Deposition, with thicknesses of 1, 2 and 4apparent and SBHreal ), ideality factor η and insulating layer thicknesses were extracted from the I-V curves. Thicker insulating layers produce higher η and reduce the SBHreal value, for both dielectrics. An interfacial layer of silicon oxycarbide with thickness of 0.2real goes from 1.222 and TiO2 , respectively. The reverse currents for all structures at 40
Source:Thin Solid Films
Author(s): I.R. Kaufmann, A. Pick, M.B. Pereira, H. Boudinov