Publication date: 1 December 2016
Source:Thin Solid Films, Volume 620
Author(s): Junichi Nomoto, Hisao Makino, Tetsuya Yamamoto
We have been developing a deposition technology to achieve Al-doped ZnO (AZO) polycrystalline films with a well-defined (0001) orientation. We propose the use of very thin critical layers (CLs ) made from Ga-doped ZnO (GZO) films deposited by ion plating with direct-current arc discharge, which strongly affect the orientation of AZO films deposited by direct-current magnetron sputtering. The Al2 O3 content in the sputtering target was 0.5CLs exhibited high-Hall-mobility values of 50.1CL -free AZO films. The presence of CLs with a preferential c -axis orientation as interfaces between AZO films and glass substrates plays a critical role in producing AZO films having a textured polycrystalline structure with a well-defined (0001) orientation.
Source:Thin Solid Films, Volume 620
Author(s): Junichi Nomoto, Hisao Makino, Tetsuya Yamamoto