Publication date: 31 January 2017
Source:Thin Solid Films, Volume 622
Author(s): Q. Qiao, Y.W. Li, J.Z. Zhang, Z.G. Hu, J.H. Chu
Bismuth oxide thin films have been produced from the precursor of triphenyl bismuth and ozone by using the atomic layer deposition (ALD) technique. The growth rate of 0.232 O3δ . High-resolution transmission electron microscopy reveals a mixed growth mode, horizontal growth initially, and subsequent vertical/island growth during the deposition process.
Source:Thin Solid Films, Volume 622
Author(s): Q. Qiao, Y.W. Li, J.Z. Zhang, Z.G. Hu, J.H. Chu
