Detection of resistive switching behavior based on the Al2O3/ZnO/Al2O3 structure with alumina buffers

Publication date: 1 February 2017
Source:Thin Solid Films, Volume 623
Author(s): Q. Qiao, D. Xu, Y.W. Li, J.Z. Zhang, Z.G. Hu, J.H. Chu
The single ZnO layer and a sandwich Al2O3/ZnO/Al2O3 structure were prepared via atomic layer deposition, and the single ZnO layer showed a feature of ohmic conduction only. When we added that together with top and bottom alumina buffers, a non-polar resistive switching (RS) behavior was accomplished, allowing investigation of its electric endurance and retention characteristics. Analysis of the conduction mechanism at both high and low resistance states using auxiliary mathematic tools resulted in the proposed model of conducting filaments formed in the insulating Al2O3 buffers. The effect of stopping voltage Vend on the resistance window at high resistance state is studied and discussed.