Publication date: 1 February 2017
Source:Thin Solid Films, Volume 623
Author(s): Qi Ouyang, Wenwen Wang, Qiang Fu, Dongmei Dong
One set of tungsten-doped indium oxide thin films (In2 O3 :W, IWO) and another set of tin-doped indium oxide thin films (In2 O3 :Sn, ITO) were prepared on glass substrates by radio frequency (RF) reactive magnetron sputtering method. The as-deposited IWO and ITO films have resistivity values at a level of 10−3 protective layer under AO oxidation.
Source:Thin Solid Films, Volume 623
Author(s): Qi Ouyang, Wenwen Wang, Qiang Fu, Dongmei Dong