Publication date: Available online 10 January 2017
Source:Thin Solid Films
Author(s): Yazhou Huang, Lei Liu, Weiwei Zhao, Yunfei Chen
High crystalline MoS2 films are prepared by one-step ALD without followed high-temperature annealing. MoCl5 and H2 S are used as precursors, while Si and Al2 O3 are used as substrates respectively. The obtained MoS2 films are characterized by Atomic Force Microscopy (AFM), Raman spectroscopy, Transmission Electron Microscopy (TEM), Scanning Electron Microscopy (SEM), X-ray diffraction (XRD), indicating they possess structures in high quality. Experimental results demonstrate the film grain sizes can be tuned from ~2 O3 can do better than Si as a substrate for the film building for more necessary hydroxyls during initial reaction on its surface. The average growth rate of the high crystallinity MoS2 film is ~2 O3 substrate and ~
Source:Thin Solid Films
Author(s): Yazhou Huang, Lei Liu, Weiwei Zhao, Yunfei Chen
