Publication date: Available online 8 December 2015
Source:Thin Solid Films
Author(s): A.K. Sahoo, G.M. Wu
In this report, amorphous indium gallium zinc oxide (a -IGZO) thin films were deposited on glass substrates using different argon flow rates (AFR). The impact on the electrical properties of the a -IGZO thin-film transistors with various AFR during film growth has been carefully investigated. The AFR varied 20a -IGZO films achieved transmittance higher than 80% in the wavelength range of 350–10002 prepared by simple, low-cost electron beam evaporator system.
Source:Thin Solid Films
Author(s): A.K. Sahoo, G.M. Wu