Publication date: 1 February 2017
Source:Thin Solid Films, Volume 623
Author(s): Jeung Sun Ahn, Ramchandra Pode, Kwang Bae Lee
We have investigated the high quality p-type Cu2 O thin films produced by the post vacuum annealing process of Cu2 O thin films deposited on glass substrates at room temperature by facing target sputtering. As-deposited stoichiometric films show the high Cu2 O (111)-axis orientation with the minimum value of electrical resistivity of 172 partial pressure. With the vacuum annealing at 5502 O thin film could be obtained. The highest value of Hall mobility μH of 612 O thin film. Such high value of μH in the described stoichiometric p-type Cu2 O thin film is believed to be due to the minimized oxygen vacancies induced by optimized vacuum annealing of a stoichiometric as-deposited Cu2 O thin film.
Source:Thin Solid Films, Volume 623
Author(s): Jeung Sun Ahn, Ramchandra Pode, Kwang Bae Lee
