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Effects of vacuum annealing on carrier transport properties of band gap-tunable semiconducting amorphous Cd–Ga–O thin films

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Publication date: 28 February 2017
Source:Thin Solid Films, Volume 624
Author(s): Chiyuki Sato, Yota Kimura, Hiroshi Yanagi
The effect of vacuum annealing on the amorphous oxide semiconductor Cd–Ga–O system with a tunable band gap was examined. While the amorphous halo peak in XRD patterns of the films with Cd concentration of ~70% started sharpening after annealing at a temperature ≥200°C. In contrast, the films with Cd content of ~50% and ~20% were not crystallized for annealing temperatures up to 700°C. Carrier concentrations and Hall mobilities of ~70% and ~50% films were maximized by annealing at 400°C and 500°C, respectively, regardless of the properties of the as-deposited films, which were varied because of the unintended variation of deposition conditions such as the residual water vapor pressure in the deposition chamber. The initial electrical conductivity of ~20% films widely varied from <108 to 11S·cm1, and annealing at 500°C was required for obtaining conductive films from the insulating as-deposited films. The maximum Hall mobility for films with Cd content of ~70% and ~50% films was ≥10cm2 V1 s1 and that for the film with ~20% Cd content was ≥3cm2 V1 s1.


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